Intrinsic limits on electron mobility in disordered dilute nitride semiconductor alloys

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 352-356

  Fahy, S ^a,b   Lindsay, A ^a   O'Reilly, E P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MATRIX ALGEBRA;

COMPOSITION DEPENDENCE; DILUTE NITRIDE; SEMICONDUCTOR ALLOYS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 10844248526     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040876     Document Type: Article

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