Room-temperature 1.54 μm electroluminescence from erbium-doped Si/SiGe waveguides

Applied Physics Letters

Volumn 73, Issue 21, 1998, Pages 3061-3063

  Neufeld, E ^a   Sticht, A ^a   Luigart, A ^a   Brunner, K ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS;

AVALANCHE BREAKDOWN; ELECTRICAL PUMPING; INTRABAND TRANSITIONS; WAVEGUIDE EMISSION;

OPTICAL WAVEGUIDES;

EID: 0032561599     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122672     Document Type: Article

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