Exposure of defects in GaN by plasma etching

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 2, 2005, Pages 405-407

  Choi, H W ^a   Liu, C ^a   Cheong, M G ^a   Zhang, J ^b   Chua, S J ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FEATURES; DOPED FILMS; NANOPIPES; PLASMA CHEMISTRY;

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); FILM GROWTH; INDUCTIVELY COUPLED PLASMA; OXIDATION; PLASMA ETCHING; SPUTTERING;

GALLIUM NITRIDE;

EID: 10644285671     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2372-5     Document Type: Article

References (10)

1. S. Sakai, T. Wang, Y. Morishima, Y. Naoi: J. Cryst. Growth 221, 334 (2000)
2. S.P. Sundararajan, D. Crouse, Y.H. Lo: J. Vac. Sci. Technol. B 20, 1339 (2002)
3. H.W. Choi, J. Zhang, S.J. Chua: Mater. Sci. Semicond. Proc. 4, 567 (2001)
4. H.W. Choi, S.J. Chua, A. Raman, J.S. Pan, A.T.S. Wee: Appl. Phys. Lett. 77, 1795 (2000)
5. W. Qian, M. Skowronski, M. de Graef, K. Doverspike, L.B. Rowland, D.K. Gaskill: Appl. Phys. Lett. 66, 1252 (1995)
6. Z. Liliental-Weber, Y. Chen, S. Ruvimov, J. Washburn: Phys. Rev. Lett. 79, 2835 (1997)
7. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, M. Ikeda: Appl. Phys. Lett. 76, 3421 (2000)
8. L.T. Romano, C.G. Van de Walle, J.W. Ager, W. Gotz, R.S. Kern: J. Appl. Phys. 87, 7745 (2000)
9. S. Ruvimov, Z. Liliental-Weber, T. Suski, J.W. Ager III, J. Washburn, J. Krueger, C. Kisielowski, E.R. Weber, H. Amano, I. Akasaka: Appl. Phys. Lett. 69, 990 (1996)
10. J. Sanchez-Paramo, J.M. Calleja, M.A. Sanchez-Garcia, E. Calleja: Appl. Phys. Lett. 78, 4124 (2001)