Gallium nitride: Method of defect characterization by wet oxidation in an oxalic acid electrolytic cell

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1339-1341

  Sundararajan, Sri Priya ^a   Crouse, David ^a   Lo, Yu Hwa ^b  

^a School of Operations Research and Industrial Engineering   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBOXYLIC ACIDS; CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; ELECTROLYSIS; ELECTROLYTIC CELLS; ETCHING; OXIDATION; PRESSURE; SURFACES; TEMPERATURE;

ANODIC ETCHING; DEFECT DENSITY; ETCH PIT DENSITY; GALLIUM NITRIDE FILM; OXALIC ACID ELECTROLYTIC CELL; THREADING DISLOCATIONS; WET OXIDATION;

GALLIUM NITRIDE;

EID: 0035982536     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1488644     Document Type: Conference Paper

References (6)