Thin nickel suicide layer formation on silicon on insulator material

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 42-45

  Alberti, A ^a   Cafra, B ^a   Bongiorno, C ^a   Mannino, G ^a   Privitera, V ^a   Kammler, T ^b   Feudel, T ^b  

^a CNR IMM   (Italy)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Insulator material; Nickel suicide; Silicon

Indexed keywords

AGGLOMERATION; ANNEALING; DIFFUSION; NICKEL COMPOUNDS; NITROGEN; PHASE TRANSITIONS; SILICON WAFERS; STRUCTURAL ANALYSIS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL ACTIVATION; INSULATOR MATERIALS; NICKEL SILICIDE; STRUCTURAL DEGRADATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 10644282989     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.029     Document Type: Conference Paper

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