Structural defects characterisation of GaInNAs MQWs by TEM and PL

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 385-388

  Herrera, M ^a   Gonzalez D ^a   Garcia R ^a   Hopkinson, M ^b   Navaretti, P ^b   Gutierrez M ^b   Liu, H Y ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GALLIUM ALLOYS; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTOLUMINESCENCE; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

FRANK DISLOCATION LOOP; MULTIQUANTUM WELLS; PHOTOLUMINESCENCE SPECTROSCOPY;

QUANTUM WELL LASERS;

EID: 10644273623     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040870     Document Type: Article

References (12)

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