Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 3, 1996, Pages 302-304

  Passlack, Matthias ^a,b   Hong, Minghwei ^a   Mannaerts, Joseph P ^a   Opila, Robert L ^a   Ren, Fan ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Phoenix Corporation Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE PROPERTIES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ARGON ION LASERS; GALLIUM OXIDE; INTERFACE RECOMBINATION VELOCITY; INTERFACE STATE DENSITY;

INTERFACES (MATERIALS);

EID: 0030188856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118040     Document Type: Article

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