Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 2, 1999, Pages

  Kim, Seongsin ^a   Erdtmann, Matthew ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033408920     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. K. Kamath, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, Appl. Phys. Lett. 70, 2952 (1997).
3. R. Mirin, A. Gossard and J. Bowers, Electron. Lett. 32, 1732 (1996).
4. D. Huffaker, O. Baklenov, L. Graham, B. Streetman and D. Deppe, Appl. Phys. Lett. 70, 2356 (1997).
5. H. Benisty, C. Sottomayor-Torres and C. Weisbuch, Phys. Rev. B44, 10945 (1991).
6. J. Phillips, K. Kamath and P. Bhattacharya, Appl. Phys. Lett. 72, 2020 (1998).
7. S. Pan, Y. P. Zeng, M. Y. Kong, J. Wu, Y. Q. Zhu, H. Zhang, J. M. Li and C. Wang, Electron. Lett. 32, 1726 (1996).
8. S. Sauvage, P. Boucaud, F. H. Jullien, J. M. Gerard and V. T. Mieg, Appl. Phys. Lett. 71, 2785 (1997).
9. K. W. Berryman, S. A. Lyon and M. Segev, Appl. Phys. Lett. 70, 1861 (1997).
10. M. Grundmann, O. Stier and D. Bimberg, Phys. Rev. B52, 11969 (1995).
11. S. Kim, M. Erdtmann and M. Razeghi, Presented at International Conference Defects in Semiconductors (ICDS-19, 1997), part 3, Vol. 258-263, p. 1643.
12. H. Mohseni, E. Michel, J. Sandven and M. Razeghi, Appl. Phys. Lett. 71, 1403 (1997).