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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3825-3827

Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy

(8) Kim, E K a Kim, J S a Hwang, H b Park, K b Yoon, E b Kim, J H c Park, I W c Park, Y J d

a Hanyang University (South Korea)

b Seoul National University (South Korea)

c Korea Basic Science Institute (KBSI) (South Korea)

d Korea Institute of Science and Technology (South Korea)

Author keywords

Capture barrier; Deep level transient spectroscopy; Energy level; InAs; InP; Quantum dot

Indexed keywords

ACTIVATION ANALYSIS; ELECTRIC CONDUCTANCE; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS;

CAPTURE BARRIER; DEEP-LEVEL TRANSIENT SPECTROSCOPY; INAS; INP;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4444237058 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.3825 Document Type: Conference Paper

Times cited : (14)

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