A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 362-366

  Kalkofen, Bodo ^a   Lisker, Marco ^a   Burte, Edmund P ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

MOSFET; Phosphine adsorption; Phosphours vapor phase doping; Shallow junction; Sheet resistance

Indexed keywords

ADSORPTION; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; DIFFUSION; MOSFET DEVICES; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; ULSI CIRCUITS;

PHOSPHINE ADSORPTION; PHOSPHORUS VAPOR PHASE DOPING; SHALLOW JUNCTION; SHEET RESISTANCE;

DOPING (ADDITIVES);

EID: 10644256503     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.064     Document Type: Conference Paper

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