Performance of GaAs JFET at a cryogenic temperature for application to readout circuit of high-impedance detectors

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2042-2047

  Fujiwara, Mikio ^a   Sasaki, Masahide ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Cryogenic temperature; GaAs JFET; High impedance configuration; Random telegraph signal (RTS) noise

Indexed keywords

CAPACITANCE; CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; HYSTERESIS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PHOTODETECTORS; READOUT SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

CRYOGENIC TEMPERATURE; HIGH IMPEDANCE CONFIGURATION; HIGH IMPEDANCE DETECTORS; RANDOM TELEGRAPH SIGNAL (RTS) NOISE; READOUT CIRCUIT;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 10644255733     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.839756     Document Type: Article

References (14)

1. B. Dierickx, E. Simoen, S. Cos, J. Vermeiren, C. Claeys, and G. J. Declerck, "Anomalous kink-related excess noise in MOSFETs at 4.2 K," IEEE Trans. Electron Devices, vol. 38, no. 4, pp. 907-912, Apr. 1991.
2. R. R. Ward, R. K. Kirschman, M. D. Jhabvala, R. S. Babu, N. C. Das, D. V. Camin, and G. Pessina, "Development of cryogenic Ge JFETs," J. Phys. IV France, vol. 8, pp. 123-126, 1998.
3. R. K. Kirschman and J. A. Lipa, "Further evaluation of GaAs FETs for cryogenic readout," in Proc. SPIE, vol. 1946, Infrared Detectors and Instrumentation, W. H. Makky, Ed., 1993, pp. 350-364.
4. E. T. Young, J. T. Davis, C. L. Thompson, G. H. Rieke, G. Rivlis, R. Schnurr, J. Cadien, L. Davidson, G. S. Winters, and K. A. Kormos, "Far-infrared imaging array for SIRTF," in Proc. SPIE, vol. 3354, Infrared Astronomical Instrumentation, A. M. Fowler, Ed., 1998, pp. 57-65.
5. J. Wolf, "Low-background far-infrared detectors and arrays," Opt. Eng., vol. 33, no. 5, pp. 1492-1500, 1994.
6. T. Hirao, Y. Hibi, M. Kawada, H. Nagata, H. Shibai, T. Watabe, M. Noda, and T. Nakagawa, "Cryogenic readout electronics with silicon P-MOS-FETs for the infrared astronomical satellite, ASTRO-F," Ances Space Res. 2002.
7. M. Akiba, "1/f dielectric polarization noise in silicon p/n junctions," Appl. Phys. Lett., vol. 77, no. 22, pp. 3236-3238, 1997.
8. M. Fujiwara, M. Sasaki, and M. Akiba, "Reduction method for low-frequency noise of GaAs junction field effect transistor at a cryogenic temperature," Appl. Phys. Lett., vol. 80, no. 10, pp. 1844-1846, 2002.
9. A. Van der Ziel, "Unified presentation of 1/f noise in electric devices; fundamental 1/f noise source," Proc. IEEE, vol. 76, pp. 233-258, Mar. 1988.
10. K. Kandiah, "Random telegraph signal currents and low-frequency noise in junction field effect transistors," IEEE Trans. Electron Devices vol. 41, no. 11, pp. 2006-2015, Nov. 1994.
11. H. H. Mueller and M. Schulz, "Random telegraph signal: An atomic probe of the local current in field-effect transistors," J. Appl. Phys. vol. 83, no. 3, pp. 1734-1741, 1998.
12. M. Nakamura, I. Hase, and K. Oshiba, Personal Communication, Sony Corp., Kanagawa, Japan, 2003.
13. J. Berntgen, L. Heime, W. Daumann, U. Auer, F. J. Tegude, and A. Matulionis, "The 1/f noise of InP based 2deg devices and its dependence on mobility," IEEE Trans. Electron Devices, vol. 46, no. 1, pp. 194-203, Jan. 1999.
14. J. M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, "1 /f noise in MODFETs at low drain bias," IEEE Trans. Electron Devices vol. 37, no. 10, pp. 2250-2253, Oct. 1990.