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Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1844-1846

Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

(3) Fujiwara, M a Sasaki, M a Akiba, M a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL TEMPERATURES; CRYOGENIC ELECTRONICS; CRYOGENIC TEMPERATURES; GAAS; GAAS JFET; JUNCTION FIELD-EFFECT TRANSISTORS; LOW FREQUENCY; LOW NOISE; LOW POWER; LOW-FREQUENCY NOISE; NOISE SOURCE; RANDOM TELEGRAPH SIGNALS; REDUCTION METHOD; SPECTRAL NOISE; SWITCHING RATES;

CRYOGENICS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; TELEGRAPH; THERMAL CONDUCTIVITY; THERMAL NOISE;

SEMICONDUCTING GALLIUM;

EID: 79956016015 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1461421 Document Type: Article

Times cited : (34)

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