Development of cryogenic Ge JFETs

Journal De Physique. IV : JP

Volumn 8, Issue 3, 1998, Pages

  Ward, R R ^a   Kirschman, R K ^a,g   Jhabvala, M D ^b   Babu, R S ^c   Das, N C ^d   Camin, D V ^e,f   Pessina, G ^e,f  

^a Box 3065   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c BALL AEROSPACE AND TECHNOLOGIES CORP   (United States)

^d HUGHES STX CORPORATION   (United States)

^e UNIVERSITY OF MILAN   (Italy)

^f INFN SEZIONE DI MILANO   (Italy)

^g NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC EQUIPMENT; ELECTRIC CURRENTS; EPITAXIAL GROWTH; MESFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL NOISE MEASUREMENT;

DEEP CRYOGENIC OPERATIONS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032089915     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1998328     Document Type: Article

References (11)

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2. Kirschman R.K. "Transistor noise characteristics for low-frequency analog cryogenic instrumentation" Proc. Symp. Low Temperature Electronics and High Temperature Superconductivity, Electrochemical Society, Proceedings 93-22 (1993) 223-235.
3. Elad E. and Nakamura M. "Germanium FET - a novel low-noise active device" Nuclear Inst. Methods 54 (1967) 308-310.
4. Elad E. and Nakamura M. "Germanium FET - a novel low-noise active device" IEEE Trans. Nuclear Science NS-15 (1968) 283-290.
5. Elad E., Ph.D. Dissertation, Univ. of California, Berkeley (1968) Univ. Microfilms no. 69-3595.
6. Gray K.W. and Hardy W.N. "A study of noise in field-effect transistors at low temperatures" North American Rockwell Corp. Technical Report SCTR-69-28 (1969).
7. Daybell M.D. "Field effect transistors for sub-MHz applications at temperatures below 4.2 Kelvins" Refrigeration Science and Technology; Cryophysics and Cryoengineering Commission, International Institute of Refrigeration (1970) 215-219.
8. Sesnic S.S., Craig G.R., Champion J.W. and Leskovar B. "Investigations of germanium FET and MOSFET at LHe temperatures" Conf. Record - IEEE Southeastern Conference (1969) 17D1-17D8.
9. Arentz R.F., Strecker D.W., Goebel J.H. and McCreight C.R. "Brief characterization of germanium junction field effect transistors (FETs) at 77, 4, and 1.8 K" SPIE Proceedings 364 (1983) 141-152.
10. Kirschman R.K. and Lipa J.A. "Further evaluation of GaAs FETs for cryogenic readout" SPIE Proceedings 1946, Orlando, Florida, (April 1993) 350-364.
11. Goldberg R.T., Jhabvala M.D., Kirschman R.K., Wang S., Gwo D.-H. and Lipa J.A. "Fabrication and characterization of low-noise cryogenic Si JFETs" Proc. Symp. Low Temperature Electronics and High Temperature Superconductivity, Electrochemical Society, Proceedings 95-9 (1995) 428-439.