Comprehensive, physically based modelling of As in Si

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 135-140

  Pinacho, R ^a   Jaraiz, M ^a   Castrillo, P ^a   Rubio, J E ^a   Martin Bragado, I ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

As; Clusters; Model

Indexed keywords

AMORPHIZATION; ANNEALING; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; FERMI LEVEL; LOW TEMPERATURE EFFECTS; MODELS; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CLUSTERS; DEVICE FABRICATION; ELECTRICAL DEACTIVATION; THERMAL PROCESSES;

ARSENIC;

EID: 10644246770     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.026     Document Type: Conference Paper

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