Transient enhanced diffusion of arsenic by self-implantation - The role of As-I clusters

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Kim, R ^a   Aoki, T ^a   Furuta, Y ^a   Kobyashi, H ^a   Xia, J ^a   Saito, T ^a   Kamakura, Y ^a   Taniguchi, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; ATOMS; BORON; DIFFUSION; DOSIMETRY; ION IMPLANTATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY;

IMMOBILE CLUSTERS; SELF IMPLANTATION; SELF INTERSTITIAL ATOMS; TRANSIENT ENHANCED DIFFUSION;

SILICON WAFERS;

EID: 10644286967     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-610-b8.2     Document Type: Conference Paper

References (19)