Selective formation of high-density and high-uniformity InAs/GaAs quantum dots for ultra-small and ultra-fast all-optical switches

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 133-136

  Nakamura, Y ^a,b   Nakamura, H ^a   Ohkouchi, S ^a   Ikeda, N ^a,b   Sugimoto, Y ^a   Asakawa, K ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (OPTICAL); LIGHT AMPLIFIERS; NUCLEATE BOILING; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

MONOLITHIC OPTICAL SWITCHES; PHOTOLUMINESCENCE EMISSION; SYMMETRIC-MACH-ZEHNDER (SMZ) OPTICAL SWITCHES; TWO-DIMENSIONAL ORDERING;

OPTICAL SWITCHES;

EID: 10444256505     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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