Comparison of the telephone cord delamination method for measuring interfacial adhesion with the four-point bending method

Acta Materialia

Volumn 53, Issue 3, 2005, Pages 609-616

  Lee, Alan ^a   Litteken, C S ^a   Dauskardt, R H ^a   Nix, W D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; BENDING (DEFORMATION); CABLES; FINITE ELEMENT METHOD; FRACTURE MECHANICS; INTERFACIAL ENERGY; MATHEMATICAL MODELS; SILICA; SILICON; SPUTTERING; SUBSTRATES; TELEPHONE;

FOUR-POINT BENDING METHOD; INTERFACE FRACTURE ENERGY; INTERFACIAL ADHESION; TELEPHONE CORD;

DELAMINATION;

EID: 10444245959     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2004.10.014     Document Type: Article

References (23)

1. Ohring M. The materials science of thin films. Boston: Academic Press; 1992. p. 444-6.
2. Hyoo-Soo J, Chu YZ, Durning CJ, White RC. Surf Interface Anal 1992;18:4.
3. Charalambides PG, Cao HC, Lund J, Evans AG. Mech Mater 1990;8:269.
4. Dauskardt RH, Lane M, Ma Q, Krishna N. Eng Fract Mech 1998;61:141-62.
5. Lee Alan, Clemens BM, Nix WD. Acta Mater 2004;52(7):2081-93.
6. Hutchinson JW, Thouless MD, Linger EG. Acta Metall Mater 1992;40:295.
7. Hutchinson JW, Suo Z. Adv Appl Mech 1992;29:63-191.
8. Moon MW, Jensen HW, Hutchinson JW, Oh KH, Evans AG. J Mech Phys Solids 2002;50:2355-77.
9. Moody NR. 2002 [personal communication].
10. Evans AG, Ruble M, Dalgleish BJ, Charalambides PG. Mater Sci Eng A 1990;126:53-64.
11. Strohband S, Dauskardt RH. Interface Sci 2003;11(3):309.
12. Shi B, Meng WJ. J Appl Phys 2003;94:186-94.
13. Ramaswamy V. Ph.D. Thesis, Stanford University; 2000.
14. Windischmann H. CRC Cr Rev Sol State Mater Sci 1992;17:547.
15. Thornton JA, Hoffman DW. Thin Solid Films 1989;171:5.
16. Nix WD. Metall Trans A 1989;20A:2217-45.
17. Flinn PA, Gardner DS, Nix WD. IEEE T Electron Dev 1987;ED-34:689-99.
18. Doerner MF, Brennan S. J Appl Phys 1988;63:126-31.
19. von Preissig FJ. Ph.D. Thesis, Stanford University; 1991.
20. Wang JS, Suo Z. Acta Met 1990;38:1279-90.
21. Litteken CS, Dauskardt RH. Int J Fracture 2003; 119(4-120): 475-85. 1-2.
22. Ma Q, Bumgarner J, Fujimoto H, Lane M, Dauskardt RH. Materials reliability in microelectronics VII Symposium; San Francisco (CA), 31 March-3 April 1997, USA. p. 3-14.
23. Suo Z, Hutchinson JW. Int J Fracture 1990;43:1-18.