GaAs on silicon using an oxide buffer layer

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 1-8

  Droopad, R ^a   Curless, J ^a   Yu, Z ^a   Jordan, D ^a   Liang, Y ^a   Overgaard, C ^a   Li, H ^a   Eschrich, T ^a   Ramdani, J ^a   Hilt, L ^a   Craigo, B ^a   Eisenbeiser, K ^a   Kulik, J ^a   Fejes, P ^a   Finder, J ^a   Hu, X ^a   Wei, Y ^a   Edwards, J ^a   Moore, K ^a   O'Steen, M ^b   Baklenov, O ^b   more..

^a MOTOROLA INC   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; BUFFER LAYERS; INTERFACIAL LAYERS; THERMAL MISMATCH;

CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); OPTICAL INTERCONNECTS; SEMICONDUCTING SILICON; SUPERLATTICES; THERMAL CONDUCTIVITY; THERMAL CYCLING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10444241114     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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