A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 4, 2004, Pages 667-677

  McAdams, Hugh P ^a   Acklin, Randy ^a   Blake, Terry ^a   Du, Xiao Hong ^b   Eliason, Jarrod ^b   Fong, John ^a   Kraus, William F ^b   Liu, David ^c   Madan, Sudhir ^a   Moise, Ted ^a   Natarajan, Sreedhar ^d   Qian, Ning ^a   Qiu, Yunchen ^a   Remack, Keith A ^a   Rodriguez, John ^a   Roscher, John ^a   Seshadri, Anand ^a   Summerfelt, Scott R ^a  

^a TEXAS INSTRUMENTS   (United States)

^b Ramtron International Corporation   (United States)

^c Integrated Silicon Solution Inc   (United States)

^d ATMOS Corporation   (Canada)

Author keywords

1T1C; Embedded FRAM (eFRAM); Ferroelectric memory; Ferroelectric random access memory (FRAM); Non volatile; Overwrite sense amplifier; Programmable reference generation

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; ELECTRIC POTENTIAL; EMBEDDED SYSTEMS; FERROELECTRIC MATERIALS; MASKS; RELIABILITY; TRANSISTORS;

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); OVERWRITE SENSE AMPLIFIERS; PROGRAMMABLE REFERENCE GENERATION;

RANDOM ACCESS STORAGE;

EID: 10444235431     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.825241     Document Type: Article

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