Modeling ferroelectric capacitor switching using a parallel-elements model

Integrated Ferroelectrics

Volumn 16, Issue 1-4, 1997, Pages 199-208

  Jiang, Bo ^a   Lee, Jack C ^a   Zurcher, Peter ^b   Jones Jr , Robert E ^b  

^a The University of Texas at Austin   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC DEVICES; HYSTERESIS; MATHEMATICAL MODELS;

FERROELECTRIC CAPACITORS; PARALLEL ELEMENT MODEL;

CAPACITORS;

EID: 0031381785     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013042     Document Type: Article

References (6)

1. A. K. Kulkarni, G. A. Rohrer, S. Narayan and L. D. McMillan, "A Circuit Model for a Thin Film Ferroelectric Memory Device," Ferroelectrics, 116 (1-2), 95, (1991).
2. J. T. Evans and J. A. Bullington, "A Ferroelectric Capacitor Simulation Model", unpublished.
3. D. E. Dunn, "A Ferroelectric Capacitor Macromodel and Parameterization Algorithm for Spice Simulation," IEEE Transaction on Ultrasonics, Ferroelectrics, and Frequency Control, 41(3), 3 (1994).
4. S. L. Miller, J. R. Schwank, R. D. Nasby, and M. S. Rodgers, "Modeling Ferroelectric Capacitor Switching with Asymmetric Nonperiodic Input Signals and Arbitrary Initial Conditions," J. Appl. Phys. 70 (5), 2849 (1991).
5. S. L. Miller, and P. J. McWhorter, "Physics of the Ferroelectric Nonvolatile Memory Field Effect Transistor," J. Appl. Phys. 72 (12), 5999 (1992).
6. P. Zurcher and F. D. Gealy, "Polycrystalline Ferroelectric Thin Film Capacitors for Non-Volatile Random Access Memories: Self-Consistent, Quasi-Static Calculation, and Comparison with Experiment," ELSOFT 93, Southhampton, UK, July 1993.