Optical study of Si nanocrystals in Si/SiO2 layers by spectroscopic ellipsometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 167-172

  En Naciri, A ^a   Mansour, M ^a   Johann, L ^a   Grob, J J ^b   Eckert, C ^b  

^a Lab Phys Liquides et Interfaces   (France)

^b Faculté de Médecine   (France)

Author keywords

Ellipsometry; Fourouhi Bloomer model; Optical properties; Si nanocrystal

Indexed keywords

ELLIPSOMETRY; ION IMPLANTATION; LIGHT EMISSION; MULTILAYERS; POSITIVE IONS; REFRACTIVE INDEX; SILICA; SPECTROSCOPIC ANALYSIS;

NANOCRYSTALS; OPTICAL MODELS;

NANOSTRUCTURED MATERIALS;

EID: 1042288920     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.074     Document Type: Conference Paper

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