Temperature behaviour of optical properties of Si+-implanted SiO2

European Physical Journal D

Volumn 16, Issue 1-3, 2000, Pages 395-398

  Valenta, J ^a   Dian, J ^a   Luterova K ^b   Knapek P ^b   Pelant, I ^b   Nikl, M ^b   Muller, D ^c   Grob, J J ^c   Rehspringer, J L ^d   Honerlage B ^d  

^a CHARLES UNIVERSITY   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UPR SPI A0292   (France)

^d INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; LIGHT EMISSION; NANOCRYSTALS; OPTICAL PROPERTIES; POROUS SILICON; SILICON OXIDES; SILICON WAFERS; TEMPERATURE DISTRIBUTION;

DECAY TIME; IMPLANTATION ENERGIES; IMPLANTATION PROFILES; PEAK CONCENTRATIONS; SI ATOMS; SI ION IMPLANTATIONS; SI NANOCRYSTAL; SI WAFER; SILICON NANOCRYSTALS; TEMPERATURE BEHAVIOR;

SILICA;

EID: 18044392757     PISSN: 14346060     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100530170137     Document Type: Article

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