Initial suicide formation process of single oriented (002) Hf film on Si and its diffusion barrier property

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 2002-2006

  Shinkai, Satoko ^a,b   Sasaki, Katsutaka ^a   Abe, Yoshio ^a   Yanagisawa, Hideto ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Chemical bonding state of first nucleated silicide; Diffusion barrier property of Hf; Initial formation process of Hf suicide; Low contact resistivity

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; HAFNIUM; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIER PROPERTY; LOW CONTACT RESISTIVITY;

SEMICONDUCTING FILMS;

EID: 0032048363     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2002     Document Type: Article

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