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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 724-728

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

(5) Nonogaki, Y a Iguchi, T a Fuchi, S a Fujiwara, Y a Takeda, Y a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON DIFFRACTION; HIGH ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THERMAL EFFECTS;

GALLIUM PHOSPHIDE; INDIUM ARSENIDE; SELF-ORGANIZED ISLANDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032098501 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00144-5 Document Type: Article

Times cited : (6)

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