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EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 167-169

Annealing ambient controlled deep defect formation in InP

(7) Zhao, Y W a Dong, Z Y a Duan, M L a Sun, W R a Zeng, Y P a Sun, N F b Sun, T N b

a INSTITUTE OF SEMICONDUCTORS (China)

b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); IMPURITIES; INDIUM ALLOYS; PHOSPHORUS; QUARTZ; SEMICONDUCTOR MATERIALS;

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); DEFECT CLUSTERS; III-V SEMICONDUCTOR; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS);

POINT DEFECTS;

EID: 10244279093 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004096 Document Type: Conference Paper

Times cited : (7)

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