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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1775-1780

Dominant electron trap with metastable state in molecular beam epitaxial GaAs grown at low temperatures

(3) Hashizume, Tamotsu a Shiobara, Shunsuke a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Deep level; DLTS; EL2; LT GaAs; MBE; Metastable state; Photoquenching

Indexed keywords

EID: 0006309087 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.1775 Document Type: Article

Times cited : (2)

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