Room-temperature diffusion of evaporated Fe atom into SOI materials characterized by scanning Kelvin-SPV method

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 487-489

  Nakamura, S ^a   Ikeda, H ^a   Watanabe, D ^a   Suhara, M ^a   Okumura, T ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CONTAMINATION; EVAPORATION; IMAGE ANALYSIS; IONIZATION; IRON; PHOTOCONDUCTIVITY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SOLUBILITY; SURFACE PHENOMENA; THERMAL EFFECTS; WATER;

ELEMENTAL SEMICONDUCTORS; PHOTOCONDUCTION AND PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR STRUCTURES; SILICON-ON-INSULATOR (SOI) WAFERS;

DIFFUSION;

EID: 10244221230     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

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8. D. Watanabe, A. En, S. Nakamura, M. Suhara, T. Okumura, Appl. Surf. Sci. 216, 24 (2003)