In-Beam Mössbauer Spectroscopy after GeV-Ion Implantation at an On-line Projectile-Fragments Separator

Hyperfine Interactions

Volumn 141-142, Issue 1-4, 2002, Pages 157-162

  Yoshida, Y ^a   Kobayashi, Y ^b   Yoshida, A ^b   Diao, X ^b   Ogawa, S ^a   Hayakawa, K ^a   Yukihira, K ^a   Shimura, F ^a   Ambe, F ^b  

^a SHIZUOKA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

in beam M ssbauer spectroscopy; interstitial Fe; jump mechanism; on line isotope separator; projectile fragmentation; Si, Fe impurity; substitutional Fe

Indexed keywords

IRON DERIVATIVE; MANGANESE; SILICON DERIVATIVE;

ATOMIC PARTICLE; CONFERENCE PAPER; MEASUREMENT; MOLECULAR INTERACTION; MOSSBAUER SPECTROSCOPY; RADIOACTIVITY; REACTION ANALYSIS;

EID: 17144447989     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021258104537     Document Type: Article

References (6)

1. Kobayashi, Y., Yoshida, Y., Yoshida, A., Watanabe, Y., Hayakawa, K., Yukihira, K., Shimura, F. and Ambe, F., Hyp. Interact.126 (2000), 417.
2. Yoshida, Y., Kobayashi, Y., Hayakawa, K., Yukihira, K., Shimura, F., Yoshida, A., Diao, X., Ogawa, H., Yano, Y. and Ambe, F., Defect and Diffusion Forum194-199 (2001), 611.
3. Diao, X., Yoshida, Y., Hayakawa, K., Shimura, F. et al., Lattice defects produced by GeV-ion irradiations in Si, In: Proc. of 3rd. International Symposium on Advanced Science and Technology of Silicon Materials, JSPS, 2000, p. 175.
4. Weyer, G., Burchard, A., Fanciulli, M., Fedoseyev, V. N., Glunnlaugsson, H. P., Mishin, V. I., Sielemann, R. and the ISOLDE Collaboration, Phys. B273-274 (1999), 363.
5. Istratov, A. A., Hieslmair, H. and Weber, E. R., Appl. Phys. A69 (1999), 13.
6. Ogawa, S. and Yoshida, Y., to be published.