Kinetic study of velocity distributions in nanoscale semiconductor devices under room-temperature operation

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4208-4210

  Sano, N ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; BOUNDARY LAYERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; PROBLEM SOLVING; SCHEMATIC DIAGRAMS; VELOCITY;

BOLTZMANN TRANSPORT EQUATIONS (BTE); ELECTRONIC POTENTIAL BARRIERS; KINETIC EQUATIONS; VELOCITY DISTRIBUTION;

MOSFET DEVICES;

EID: 10044265506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812812     Document Type: Article

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