Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 327-330

  Bakin, A ^a   Behrens, I ^a   Ivanov, A ^a   Peiner, E ^a   Piester, D ^a   Wehmann, H H ^a   Schlachetzki, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

CVD; Patterning; Selective etching; Selective growth; SiC on silicon

Indexed keywords

COMPUTER SIMULATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; PATTERN MATCHING; SILICON; SILICON CARBIDE; ULTRAVIOLET RADIATION; CHEMICAL VAPOR DEPOSITION; ETCHING; MEDICAL APPLICATIONS; SILICA; SILICON NITRIDE; SILICON OXIDES; SURFACE MICROMACHINING; TEMPERATURE;

SELECTIVE ETCHING; SELECTIVE GROWTH; SIC ON SILICON; BIOMEDICAL APPLICATIONS; LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONS; LOW TEMPERATURE GROWTH; MICROMECHANICAL DEVICE; PATTERNING; SURFACE MICROMACHINED STRUCTURE;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 10044278366     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.327     Document Type: Article

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