Growth of 3C-SiC bulk material by the modified Lely method

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 151-154

  Semmelroth, K ^a   Krieger, M ^a   Pensl, G ^a   Nagasawa, H ^b   Pusche R ^a   Hundhausen, M ^a   Ley, L ^a   Nerding, M ^a   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

3C SiC; Bulk growth; Modified Lely method

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ENERGY GAP; NITROGEN; PHOTOLUMINESCENCE; SINGLE CRYSTALS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

3C-SIC; BULK GROWTH; MODIFIED LELY METHOD;

SILICON CARBIDE;

EID: 8744307983     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.151     Document Type: Conference Paper

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