Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

Thin Solid Films

Volumn 472, Issue 1-2, 2005, Pages 144-149

  Chang, Joonyeon ^a   Kim, Gyeungho ^a   Lee, Woo Young ^b   Myoung, Jae Min ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Convergent beam electron diffraction (cbed); Ferromagnetism; (ga,mn)n; Gallium nitride (gan); Lattice parameter

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FERROMAGNETISM; INFORMATION ANALYSIS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE QUALITY; CURIE TEMPERATURE; PLASMA SOURCE; PLASMA-ENHANCED MOLECULAR BEAM EPITAXY (PEMBE);

GALLIUM NITRIDE;

EID: 10044258493     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.144     Document Type: Article

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