The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 287-289

  Zhang, Fuqiang ^a,b   Chen, NuoFu ^a,b   Liu, Xianglin ^a   Liu, Zhikai ^a   Yang, Shaoyan ^a   Chai, Chunlin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MECHANICS   (China)

Author keywords

A1. X ray diffraction; A3. Ion beam deposition; B1. GaN Al2O 3; B2. Ferromagnetic materials

Indexed keywords

ALUMINA; COERCIVE FORCE; CRYSTAL LATTICES; FERROMAGNETIC MATERIALS; ION BEAM ASSISTED DEPOSITION; ION IMPLANTATION; LATTICE CONSTANTS; MAGNETIC HYSTERESIS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING MANGANESE COMPOUNDS; SOLID SOLUTIONS; X RAY DIFFRACTION ANALYSIS;

DILUTED MAGNETIC SEMICONDUCTORS (DMS); SPIN CONTROLLED DEVICES;

MAGNETIC SEMICONDUCTORS;

EID: 0842265188     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.031     Document Type: Article

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