SOI wafer mold with high-aspect-ratio microstructures for hot embossing process

Microsystem Technologies

Volumn 10, Issue 6-7, 2004, Pages 544-546

  Zhao, Y ^a   Cui, T ^a  

^a LOUISIANA TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; GLASS TRANSITION; INDUCTIVELY COUPLED PLASMA; MICROSTRUCTURE; MOLDS; SILICON WAFERS;

EXCHANGE RATE; HOT EMBOSSING; MICROMANUFACTURING; SILICON MOLDS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 10044238055     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-004-0390-7     Document Type: Conference Paper

References (6)

1. Becker H; Heim U (2000), Hot embossing as a method for the fabrication of polymer high aspect ratio structures. Sensors and Actuators, A: Physical, vol 83, pp. 130-135
2. Scheer H-C et al (2001) Strategies for wafer-scale hot embossing lithography. Proc of SPIE - the Inter Soc Opt Engin, vol 4349, pp. 86-89
3. Becker H; Heim U (1999), Silicon as tool material for polymer hot embossing. Proceeding MEMS 99, pp. 228-231
4. Jansen H et al (1996) The black silicon method VI: high aspect ratio trench etching for MEMS applications. The 9th annual international workshop on MEMS, IEEE pp. 250-257
5. Ayon AA et al Characterization of a time multiplexed inductively coupled plasma etcher. J Electroc soc. 146 (1): 339-349
6. Zhao Y; Cui T (2003) Fabrication of high-aspect-ratio polymer-based electrostatic comb drives by hot embossing technique. J Micromechanics and Microengineering vol. 13(3): 430-435