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Volumn 2002-January, Issue , 2002, Pages 135-138
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Numerical modeling of silicon film deposition in very-high-frequency plasma reactor
a
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Author keywords
Chemical vapor deposition; Electrons; Inductors; Numerical models; Plasma chemistry; Plasma density; Plasma temperature; Quantum mechanics; Semiconductor films; Silicon
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Indexed keywords
CHEMICAL REACTIONS;
CHEMICAL VAPOR DEPOSITION;
CONSERVATION;
DEPOSITION;
DESIGN OF EXPERIMENTS;
ELECTRIC INDUCTORS;
ELECTRONS;
GASES;
METALLIC FILMS;
NUMERICAL MODELS;
PHASE INTERFACES;
PLASMA APPLICATIONS;
PLASMA CVD;
PLASMA DENSITY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
QUANTUM CHEMISTRY;
QUANTUM THEORY;
REACTION RATES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICES;
SILICON;
SURFACE REACTIONS;
VAPOR DEPOSITION;
ELECTRON IMPACT REACTIONS;
MASS CONSERVATION EQUATIONS;
PLASMA CHEMISTRIES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD);
PLASMA TEMPERATURE;
QUANTUM CHEMICAL CALCULATIONS;
SEMICONDUCTOR FILMS;
VERY HIGH FREQUENCY PLASMA;
ELECTRON TEMPERATURE;
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EID: 10044226426
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2002.1034535 Document Type: Conference Paper |
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Times cited : (2)
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References (16)
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