Theory of a room-temperature silicon quantum dot device as a sensitive electrometer

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 323-326

  Vincent, J K ^a   Narayan, V ^a   Pettersson, H ^b   Willander, M ^a   Jeppson, K ^c   Bengtsson, L ^c  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b HALMSTAD UNIVERSITY   (Sweden)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTROMETERS; NANOSTRUCTURED MATERIALS; SILICA; TEMPERATURE;

GATE VOLTAGE; SENSITIVE ELECTROMETER; SILICON QUANTUM DOT DEVICE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0942290065     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625095     Document Type: Article

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