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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4038-4041

Fabrication and electrical characteristics of single electron tunneling devices based on Si quantum dots prepared by plasma processing

(6) Dutta, Amit a Kimura, Masao a Honda, Yoshiaki a Otobe, Masanori a Itoh, Akira a Oda, Shunri a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Coulomb blockade; Nanoelectronics; Quantum dots; Silicon nanocrystal; Single electron tunneling device

Indexed keywords

EID: 0000913919 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4038 Document Type: Article

Times cited : (44)

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