Measurement of trapping time constants in irradiated DOFZ silicon with test beam data

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 349-351

  Lari, T ^a  

^a INFN SEZIONE DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRON TRAPS; IONIZING RADIATION; PROBABILITY; PROTON IRRADIATION; RADIATION DETECTORS; RADIATION HARDENING; SILICON WAFERS;

CHARGE COLLECTION; PIXEL DETECTORS;

SEMICONDUCTING SILICON;

EID: 0942277298     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.019     Document Type: Conference Paper

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