In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

Sensors and Actuators, A: Physical

Volumn 109, Issue 1-2, 2003, Pages 79-87

  Ylönen, Mari ^a   Torkkeli, Altti ^a,b   Kattelus, Hannu ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b VTI Technologies Oy   (Finland)

Author keywords

Annealing; In situ boron doping; Low tensile stress; LPCVD polysilicon; Residual stress

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; DOPING (ADDITIVES); MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; MORPHOLOGY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; TENSILE STRESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

IN SITU BORON DOPING; LOW TENSILE STRESS; LPCVD POLYSILICON;

POLYSILICON;

EID: 0942268201     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.09.017     Document Type: Article

References (13)

1. M. Ylönen, A. Torkkeli, H. Kattelus, In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications, in: Proceedings of the Fourth International Conference on Materials for Microelectronics and Nanoengineering, Espoo, Finland, 10-12 June 2002, pp. 121-124.
2. Guckel H., Burns D.W., Visser C.C.G., Tilmans H.A.C., Deroo D. Fine-grained polysilicon films with built-in tensile strain. IEEE Trans. Electron. Devices. 35(6):1988;800-801.
3. French P.J., van Drieënhuizen B.P., Poenar D., Goosen J.F.L., Mallée R., Sarro P.M., Wolffenbuttel R.F. The development of a low-stress polysilicon process compatible with standard device processing. J. Microelectromech. Syst. 5(3):1996;187-196.
4. M. Biebl, G.T. Mulhern, R.T. Howe, In situ phosphorus-doped polysilicon for integrated MEMS, in: Proceedings of Transducers'95 Eurosensors IX, Stockholm, Sweden, 25-29 June 1995, pp. 198-201.
5. Akizuki M., Hirase M., Saita A., Aoe H., Doi A. Effects of the gate polycrystalline silicon film on the characteristics of MOS capacitor. IEICE Trans. Electron. E75-C(9):1992;1007-1012.
6. Kallel S., Semmache B., Lemiti M., Jaffrezic H., Laugier A. Structural and mechanical characterisation of in situ phosphorus-doped rapid thermal low pressure chemical vapour deposition polycrystalline silicon films. Microelectron. J. 30:1999;699-703.
7. H. Kahn, S. Stemmer, K. Nandakumar, A.H. Heuer, R.L. Mullen, R. Ballarini, M.A. Huff, Mechanical properties of thick, surface micromachined polysilicon films, in: Proceedings of MEMS'96, San Diego, CA, USA, 11-15 February 1996, pp. 343-348.
8. J.J. McMahon, J.M. Melzak, C.A. Zorman, J. Chung, M. Mehregany, Deposition and characterization of in situ boron-doped polycrystalline silicon films for microelectromechanical systems applications, in: Proceedings of Materials Research Society Symposium, Materials Science of Microelectromechanical Systems (MEMS) Devices II, Boston, MA, USA, 29 November-1 December 1999, pp. 31-36.
9. Maritan C.M., Berndt L.P., Torr N.G. Low pressure chemical vapour deposition of in situ boron-doped polysilicon. J. Electrochem. Soc. 135(7):1988;1793-1796.
10. Makino T., Nakamura H. Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing. Solid-State Electron. 24:1981;49-55.
11. D. Nobili, D. de Cogan, Solubility of B, Al, Ga, In, Tl, P, As and Sb in c-Si, in: R. Hull (Ed.), Properties of Crystalline Silicon, INSPEC The Institution of Electrical Engineers, London, 1999, pp. 620-635.
12. Suzuki K. Hemispherical-grained LPCVD-polysilicon films for use in MEMS applications. Sens. Actuator Part A: Phys. 79:2000;141-146.
13. Watanabe H., Aoto N., Adachi S., Kikkawa T. Device application and structure observation for hemispherical-grained Si. J. Appl. Phys. 71(7):1992;3538-3543.