Deposition and characterization of in-situ boron doped polycrystalline silicon films for microelectromechanical systems applications

Materials Research Society Symposium - Proceedings

Volumn 605, Issue , 2000, Pages 31-36

  McMahon, J J ^a   Melzak, J M ^a   Zorman, C A ^a   Chung, J ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BORON; CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); LOW TEMPERATURE EFFECTS; MICROELECTRONIC PROCESSING; RESIDUAL STRESSES; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; STRAIN GAUGES; SUSCEPTOR TEMPERATURE;

POLYSILICON;

EID: 0034510810     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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