Structural and mechanical characterization of in-situ phosphorus-doped rapid thermal low pressure chemical vapor deposition polycrystalline silicon films

Microelectronics Journal

Volumn 30, Issue 7, 1999, Pages 699-703

  Kallel, S ^a   Semmache, B ^a   Lemiti, M ^a   Jaffrezic, H ^b   Laugier, A ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC PROPERTIES; GRAIN SIZE AND SHAPE; LOW TEMPERATURE OPERATIONS; MECHANICAL PROPERTIES; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; STRUCTURE (COMPOSITION); TEXTURES; X RAY DIFFRACTION ANALYSIS;

GRAZING X RAY DIFFRACTION; PHOSPHINE; POLYCRYSTALLINE SILICON FILMS;

SEMICONDUCTING SILICON;

EID: 0032641951     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00014-2     Document Type: Article

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