New approach to negative differential conductance with high peak-to-valley ratio in silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2246-2250

  Koga, Junji ^a   Vanderstraeten, Celine ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Negative differential conductance; Peak to valley ratio; Silicon on insulator (SOI); Tunnel

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; LSI CIRCUITS; MOSFET DEVICES; SILICON WAFERS; TEMPERATURE; TUNNEL DIODES;

NEGATIVE DIFFERENTIAL CONDUCTANCE; PEAK TO VALLEY RATIO;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033706507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2246     Document Type: Article

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