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Volumn , Issue , 2000, Pages 164-168
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CMOSFET characteristics induced by moisture diffusion from inter-layer dielectric in 0.23 um DRAM technology with shallow trench isolation
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC FILMS;
DIFFUSION IN SOLIDS;
DYNAMIC RANDOM ACCESS STORAGE;
HOT CARRIERS;
MOISTURE;
SEMICONDUCTING BORON;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR JUNCTIONS;
SILICA;
SILICON NITRIDE;
CAPACITOR OVER BIT-LINE (COB) STRUCTURE;
INTERLAYER DIELECTRIC (ILD) FILMS;
SHALLOW TRENCH ISOLATION (STI);
MOSFET DEVICES;
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EID: 0033750708
PISSN: 00999512
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (12)
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References (6)
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