A highly reliable nano-clustering silica with low dielectric constant (k<2.3) and high elastic modulus (E=10 GPa) for copper damascene process

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 71-73

  Ikeda, M ^a   Nakahira, J ^a   Iba, Y ^a   Kitada, H ^a   Nishikawa, N ^a   Miyajima, M ^a   Fukuyama, S ^a   Shimizu, N ^a   Ikeda, K ^a   Ohba, T ^a   Sugiura, I ^a   Suzuki, K ^a   Nakata, Y ^a   Doi, S ^a   Awaji, N ^a   Yano, E ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Conducting materials; Copper; Dielectric constant; Dielectric materials; Dielectric measurements; Mechanical factors; Organic materials; Silicon compounds; Wiring; X ray scattering

Indexed keywords

COPPER; ELASTIC MODULI; ELECTRIC WIRING; INTEGRATED CIRCUIT INTERCONNECTS; PERMITTIVITY; SILICA; SILICON COMPOUNDS; X RAY SCATTERING;

90 NM TECHNOLOGY NODE; CONDUCTING MATERIALS; COPPER DAMASCENE PROCESS; DIELECTRIC MEASUREMENTS; LOW DIELECTRIC CONSTANTS; MECHANICAL FACTORS; NANO-CLUSTERING SILICAS; ORGANIC MATERIALS;

DIELECTRIC MATERIALS;

EID: 0842286146     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219716     Document Type: Conference Paper

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