메뉴 건너뛰기




Volumn 51, Issue 12, 2003, Pages 2548-2554

50-Gbit/s InP HEMT 4:1 multiplexer/1:4 demultiplexer chip set with a multiphase clock architecture

Author keywords

1:4 demultiplexer (DMUX); 4:1 multiplexer (MUX); InP high electron mobility transistor (HEMT); Multiphase clock (MPC); OC 768; Optical communication systems; STM 256

Indexed keywords

DEMULTIPLEXING; ELECTRIC POWER SUPPLIES TO APPARATUS; FLIP FLOP CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM PHOSPHIDE; TIME DIVISION MULTIPLEXING; TIMING CIRCUITS;

EID: 0742304084     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.819205     Document Type: Article
Times cited : (13)

References (15)
  • 2
    • 0036917457 scopus 로고    scopus 로고
    • 50 Gb/s SiGe BiCMOS 4 : 1 multiplexer and 1 : 4 demultiplexer for serial communication systems
    • Dec.
    • M. Meghelli, A. V. Rylyakov, and L. Shan, "50 Gb/s SiGe BiCMOS 4 : 1 multiplexer and 1 : 4 demultiplexer for serial communication systems," IEEE J. Solid-State Circuits, vol. 37, pp. 1790-1794, Dec. 2002.
    • (2002) IEEE J. Solid-State Circuits , vol.37 , pp. 1790-1794
    • Meghelli, M.1    Rylyakov, A.V.2    Shan, L.3
  • 3
    • 0041955064 scopus 로고    scopus 로고
    • 4 : 1 multiplexer and 1 : 4 demultiplexer chipset for data rates up to 50 Gb/s in SiGe technology
    • Paper P2.32
    • O. H. Adamczyk, S. P. Woyciehowsky, J. M. Binkley, A. E. Otero, and M. Rosmann, "4 : 1 multiplexer and 1 : 4 demultiplexer chipset for data rates up to 50 Gb/s in SiGe technology," in Proc. ECOC, vol. 3, 2002, Paper P2.32.
    • (2002) Proc. ECOC , vol.3
    • Adamczyk, O.H.1    Woyciehowsky, S.P.2    Binkley, J.M.3    Otero, A.E.4    Rosmann, M.5
  • 11
    • 0033221273 scopus 로고    scopus 로고
    • 40 Gbit/s 1 : 4 demultiplexer IC using InP-based heterojunction bipolar transistors
    • E. Sano, H. Nakajima, N. Watanabe, S. Yamahata, and Y. Ishii, "40 Gbit/s 1 : 4 demultiplexer IC using InP-based heterojunction bipolar transistors," Electron. Lett., vol. 35, no. 24, pp. 2116-2117, 1999.
    • (1999) Electron. Lett. , vol.35 , Issue.24 , pp. 2116-2117
    • Sano, E.1    Nakajima, H.2    Watanabe, N.3    Yamahata, S.4    Ishii, Y.5
  • 14
    • 0027222326 scopus 로고
    • Capacitive feedback technique for wide-band amplifiers
    • Jan.
    • M. Vadipour, "Capacitive feedback technique for wide-band amplifiers," IEEE J. Solid-State Circuits, vol. 28, pp. 90-92, Jan. 1993.
    • (1993) IEEE J. Solid-State Circuits , vol.28 , pp. 90-92
    • Vadipour, M.1
  • 15
    • 3042647066 scopus 로고    scopus 로고
    • Ultrahigh-speed integrated circuits using InP-based HEMTs
    • T. Enoki, H. Yokoyama, Y. Umeda, and T. Otsuji, "Ultrahigh-speed integrated circuits using InP-based HEMTs," Jpn. J. Appl. Phys., pt. 1, vol. 37, no. 3B, pp. 1359-1364, 1998.
    • (1998) Jpn. J. Appl. Phys., Pt. 1 , vol.37 , Issue.3 B , pp. 1359-1364
    • Enoki, T.1    Yokoyama, H.2    Umeda, Y.3    Otsuji, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.