Comment on "modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels"

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1839-1841

  Hamel, John S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC ADMITTANCE; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; NUMERICAL ANALYSIS;

DRIFT DIFFUSION EQUATIONS; MINORITY CARRIER TRANSPORT; QUASI-STATIC APPROXIMATIONS; SOFTWARE PACKAGE SPICE;

CARRIER CONCENTRATION;

EID: 0036772941     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802138     Document Type: Note

References (9)

1. J. Seitchik, A. Chatterjee, and P. Yang, "An accurate bipolar model for large signal transient and ac applications," in IEDM Tech. Dig., 1987, pp. 244-247.
2. J. S. Hamel, "An accurate quasistatic method for determining the excess phase shift in the base region of bipolar transistors," in IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis, MN, Oct. 1992, pp. 208-211.
3. J. Hamel, "A quasistatic approach for modeling the influence of emitter stored charge on the high frequency small signal ac response of bipolar transistors," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis, MN, Oct. 1994, pp. 44-47.
4. ____, "Compact modeling of the influence of emitter stored charge on the high frequency small signal ac response of bipolar transistors using quasistatic parameters," IEEE J. Solid-State Circuits, pp. 106-113, Jan. 1996.
5. ____, "An accurate charge control approach for modeling excess phase shift in the base region of bipolar transistors," IEEE Trans. Electron Devices, pp. 1092-1098, July 1996.
6. N. Rinaldi, "Modeling of small-signal minority-carrier transport in bipolar devices at arbitrary injection levels," IEEE Trans. Electron Devices, vol. 45, pp. 1501-1510, July 1998.
7. B. S. Wu and F. A. Lindholm, "One-dimensional nonquasi-static models for arbitrarily and heavily doped quasineutral layers in bipolar transistors," IEEE Trans. Electron Devices, vol. 36, pp. 727-737, Apr. 1989.
8. J. Hamel and C. Selvakumar, "The general transient charge control relation-A New charge control relation for semiconductor devices," IEEE Trans. Electron Devices, vol. 38, pp. 1467-1476, June 1991.
9. N. Rinaldi, "Analysis and modeling of small-signal bipolar transistor operation at arbitrary injection levels," IEEE Trans. Electron Devices, vol. 45, pp. 1817-1825, Aug. 1998.