An accurate charge control approach for modeling excess phase shift in the base region of bipolar transistors

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1092-1098

  Hamel, John S ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; IMPURITIES; PHASE SHIFT; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

BUILT-IN ELECTRIC FIELDS; CONVENTIONAL CHARGE CONTROL APPROACH;

BIPOLAR TRANSISTORS;

EID: 0030190702     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502420     Document Type: Article

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