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Volumn 39, Issue 8, 2000, Pages 4755-4756

Improved stability of metal-insulator-diamond semiconductor interface by employing CaF2/thin BaF2 composite insulator film

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CALCIUM COMPOUNDS; CAPACITANCE MEASUREMENT; INTERFACES (MATERIALS); SEMICONDUCTING DIAMONDS; VOLTAGE MEASUREMENT;

BARIUM DIFLUORIDE; CALCIUM DIFLUORIDE; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0034244774 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4755 Document Type: Article

Times cited : (3)

References (12)

1
- 0028747865
- D. L. Dreifus, A. J. Tessmer, J. S. Holmes, C. T. Kao, D. M. Malta, L. S. Plano and B. R. Stoner: Mater. Res. Soc. Symp. Proc. 339 (1994) 109.
- (1994) Mater. Res. Soc. Symp. Proc. , vol.339 , pp. 109
- Dreifus, D.L.¹ Tessmer, A.J.² Holmes, J.S.³ Kao, C.T.⁴ Malta, D.M.⁵ Plano, L.S.⁶ Stoner, B.R.⁷

2
- 0026102916
- C. Sh. Gildenbat, S. A. Grot, C. W. Hatfield and A. R. Badzian: IEEE Electron Device Lett. 12 (1991) 37.
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 37
- Gildenbat, C.Sh.¹ Grot, S.A.² Hatfield, C.W.³ Badzian, A.R.⁴

3
- 0026257206
- C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler and R. G. Wilson: IEEE Electron Device Lett. 12 (1991) 602.
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 602
- Zeisse, C.R.¹ Hewett, C.A.² Nguyen, R.³ Zeidler, J.R.⁴ Wilson, R.G.⁵

4
- 0023401445
- M. W. Geis, D. D. Rathman, D. J. Ehrlich, R. A. Murphy and W. T. Lindley: IEEE Electron Device Lett. 8 (1987) 341.
- (1987) IEEE Electron Device Lett. , vol.8 , pp. 341
- Geis, M.W.¹ Rathman, D.D.² Ehrlich, D.J.³ Murphy, R.A.⁴ Lindley, W.T.⁵

5
- 0029305509
- Y. Otsuka, S. Suzuki, S. Shikama, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 34 (1995) L551.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Otsuka, Y.¹ Suzuki, S.² Shikama, S.³ Maki, T.⁴ Kobayashi, T.⁵

6
- 0031248147
- Y. Yun, T. Maki and T. Kobayashi: J. Appl. Phys. 82 (1997) 3422.
- (1997) J. Appl. Phys. , vol.82 , pp. 3422
- Yun, Y.¹ Maki, T.² Kobayashi, T.³

7
- 0032304480
- H. Tanaka, Y. Yun, Y. Shirakawa, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 37 (1998) L1444.
- (1998) Jpn. J. Appl. Phys. , vol.37
- Tanaka, H.¹ Yun, Y.² Shirakawa, Y.³ Maki, T.⁴ Kobayashi, T.⁵

8
- 0342662219
- H. Tanaka, A. Ito, Y. Yun, T. Maki and T. Kobayashi: Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials, Hiroshima, 1998 (1998) p. 472.
- (1998) Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials, Hiroshima, 1998 , pp. 472
- Tanaka, H.¹ Ito, A.² Yun, Y.³ Maki, T.⁴ Kobayashi, T.⁵

9
- 0342662218
- Y. Yun, H. Tanaka, A. Ito, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 38 (1999) 2626.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 2626
- Yun, Y.¹ Tanaka, H.² Ito, A.³ Maki, T.⁴ Kobayashi, T.⁵

10
- 0026932016
- T. Maki, S. Shikama, M. Komori, Y. Sakaguchi, K. Sakuta and T. Kobayashi: Jpn. J. Appl. Phys. 31 (1992) L1446.
- (1992) Jpn. J. Appl. Phys. , vol.31
- Maki, T.¹ Shikama, S.² Komori, M.³ Sakaguchi, Y.⁴ Sakuta, K.⁵ Kobayashi, T.⁶

11
- 0030395822
- H. Kawarada: Surf. Sci. Rep. 26 (1996) 205.
- (1996) Surf. Sci. Rep. , vol.26 , pp. 205
- Kawarada, H.¹

12
- 33645041856
- L. M. Terman: Solid State Electron. 5 (1962) 281.
- (1962) Solid State Electron. , vol.5 , pp. 281
- Terman, L.M.¹

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