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Volumn 15, Issue 5, 1997, Pages 2473-2477
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Deposition of GaAs (111) epilayers on BaF2 (111)/Si (100) heterostructures by molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
BARIUM COMPOUNDS;
CHEMICAL REACTIONS;
CRYSTAL ORIENTATION;
FILM GROWTH;
HIGH ENERGY ELECTRON DIFFRACTION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SILICON;
SUBSTRATES;
SURFACE PHENOMENA;
THERMAL EFFECTS;
X RAY PHOTOELECTRON SPECTROSCOPY;
EPILAYERS;
EPITAXIAL DEPOSITION;
DEPOSITION;
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EID: 0031223283
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.580912 Document Type: Article |
Times cited : (3)
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References (13)
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