Compositional Nonuniformity in Molecular Beam Epitaxy Grown InAsSb on GaAs(111)A Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6260-6264

  Suzuki, Ryo ^a   Amano, Hidetoshi ^a   Kuroki, Toshihiro ^a   Nishinaga, Jiro ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Critical temperature; GaAs(111)A; InAsSb; Miscibility gap; Molecular beam epitaxy; Phase separation; Precipitate

Indexed keywords

ADHESION; LATTICE CONSTANTS; PHASE SEPARATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

MISCIBILITY GAPS; SURFACE SEGREGATION;

MOLECULAR BEAM EPITAXY;

EID: 0348156954     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6260     Document Type: Article

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